Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure

Authors
Jia, Y Zurbuchen, MA Wozniak, S Carim, AH Schlom, DG Zou, LN Briczinski, S Liu, Y
Citation
Y. Jia et al., Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure, APPL PHYS L, 74(25), 1999, pp. 3830-3832
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
25
Year of publication
1999
Pages
3830 - 3832
Database
ISI
SICI code
0003-6951(19990621)74:25<3830:EGOMBF>2.0.ZU;2-I
Abstract
Epitaxial Ba2RuO4 films with the K2NiF4 structure have been grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction and cross-s ectional transmission electron microscopy results indicate that the films a re c-axis oriented, single-domain, and contain relatively few stacking faul ts and intergrowths. Electrical measurements indicate metallic conductivity to low temperatures, but no evidence of superconductivity. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)04923-2].