Enhanced electron injection into light-emitting diodes via interfacial tunneling

Authors
Wolf, U Bassler, H
Citation
U. Wolf et H. Bassler, Enhanced electron injection into light-emitting diodes via interfacial tunneling, APPL PHYS L, 74(25), 1999, pp. 3848-3850
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
25
Year of publication
1999
Pages
3848 - 3850
Database
ISI
SICI code
0003-6951(19990621)74:25<3848:EEIILD>2.0.ZU;2-R
Abstract
A previous Monte Carlo simulation for hopping injection into a random organ ic dielectric has been extended to include the effect of tunneling through a thin inorganic insulator. The effect of the interface has been explained upon the fact that the attenuation length of an electron is much larger in a strongly bonded inorganic solid as compared to a van-der-Waals bonded org anic. Depending upon the system parameters, significant improvement of inje ction is predicted. (C) 1999 American Institute of Physics. [S0003-6951(99) 02125-7].