Initial stages of III-nitride growth

Citation
U. Grossner et al., Initial stages of III-nitride growth, APPL PHYS L, 74(25), 1999, pp. 3851-3853
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
25
Year of publication
1999
Pages
3851 - 3853
Database
ISI
SICI code
0003-6951(19990621)74:25<3851:ISOIG>2.0.ZU;2-6
Abstract
First-principles calculations are performed to investigate the adsorption b ehavior of group-III atoms and nitrogen on group-III-nitride(111) surfaces. We focus on one to three layers of cations on BN, AlN, GaN, and InN and co mpare their surface energies with that of the nitrogen-covered and clean su rface. The resulting surface phase diagrams indicate a preference for epita xial growth under cation-rich conditions after deposition of metal overlaye rs. This tendency, clearly pronounced for InN and GaN, is weakened for AlN and BN where lower III/V ratios are favorable. (C) 1999 American Institute of Physics. [S0003-6951(99)03025-9].