Electrical properties of covalently linked silicon polypyrrole junctions

Citation
Ie. Vermeir et al., Electrical properties of covalently linked silicon polypyrrole junctions, APPL PHYS L, 74(25), 1999, pp. 3860-3862
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
25
Year of publication
1999
Pages
3860 - 3862
Database
ISI
SICI code
0003-6951(19990621)74:25<3860:EPOCLS>2.0.ZU;2-0
Abstract
Electrodeposited polypyrrole films were formed on chemically modified hydro gen-terminated silicon surfaces that expose tethered pyrrole units. Semicon ductor/polypyrrole junctions on the native and modified substrates exhibit diode-like characteristics, with those on the latter substrate exhibiting h igher current densities and better ideality factors. Impedance measurements revealed that the improved electrical properties of junctions on the modif ied substrates were not due to a change in barrier height but rather a cons equence of incorporating sites on the silicon surface where the polymer and semiconductor have direct contact. (C) 1999 American Institute of Physics. [S0003-6951(99)02625-X].