Electrodeposited polypyrrole films were formed on chemically modified hydro
gen-terminated silicon surfaces that expose tethered pyrrole units. Semicon
ductor/polypyrrole junctions on the native and modified substrates exhibit
diode-like characteristics, with those on the latter substrate exhibiting h
igher current densities and better ideality factors. Impedance measurements
revealed that the improved electrical properties of junctions on the modif
ied substrates were not due to a change in barrier height but rather a cons
equence of incorporating sites on the silicon surface where the polymer and
semiconductor have direct contact. (C) 1999 American Institute of Physics.
[S0003-6951(99)02625-X].