Vertical integration of a spin dependent tunnel junction with an amorphousSi diode

This work demonstrates integration of magnetic tunneling junctions with hyd rogenated amorphous silicon (a-Si:H) diodes. In the finished device 11.4% c urrent change is measured when the junction free layer is switched in an ex ternal magnetic field, for 0.86 V applied to the junction-diode series. In the integrated device, the measured individual tunneling magnetoresistance signal is 25.3% at 7 mV bias, demonstrating junction robustness and process compatibility. The junction-diode series is necessary for bit selectivity in magnetic random access memories. Vertical growth of these devices may al low higher density architectures. (C) 1999 American Institute of Physics. [ S0003-6951(99)03625-6].