Writing nanometer-scale pits in sputtered carbon films using the scanning tunneling microscope

Citation
Sc. Eagle et Gk. Fedder, Writing nanometer-scale pits in sputtered carbon films using the scanning tunneling microscope, APPL PHYS L, 74(25), 1999, pp. 3902-3903
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
25
Year of publication
1999
Pages
3902 - 3903
Database
ISI
SICI code
0003-6951(19990621)74:25<3902:WNPISC>2.0.ZU;2-P
Abstract
A reproducible method of the formation of pits in a sputtered carbon surfac e with a platinum-iridium tunneling tip is presented for possible use in li thography or data storage applications. Thin carbon films are sputtered on top of chrome and gold metallic underlayers on a silicon substrate. Overall surface roughness of the carbon films is under 3 Angstrom. Holes are produ ced in the carbon film by applying short voltage pulses (4-8 V in height, 2 50 ns-100 mu s in length) across the tunneling gap. An array of holes writt en in the carbon demonstrate reproducibility and the feasibility of using t his multilayered structure in a data storage system. (C) 1999 American Inst itute of Physics. [S0003-6951(99)00923-7].