Selective dry etching using inductively coupled plasmas Part II. InN GaN and InN AlN

Two interhalogen plasma chemistries, ICI and IBr, have been examined for se lective dry etching of InN over GaN and AIN. Maximum selectivities of 55 fo r InN/GaN and 20 for InN/AlN were achieved with ICI, and 30 for InN/GaN and 14 for InN/AlN, respectively, with IBr. There are two reasons for these re sults-the relatively high volatility of the InI3 etch product and the lower bond strength of InN relative to the other two binary nitrides. Both inter halogen plasma chemistries appear promising for use in electronic device fa brication. (C) 1999 Elsevier Science B.V. All rights reserved.