Secondary electron emission measurements on synthetic diamond films

Citation
Hj. Hopman et al., Secondary electron emission measurements on synthetic diamond films, DIAM RELAT, 8(6), 1999, pp. 1033-1038
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
6
Year of publication
1999
Pages
1033 - 1038
Database
ISI
SICI code
0925-9635(199906)8:6<1033:SEEMOS>2.0.ZU;2-H
Abstract
During the electron irradiation of synthetic diamond films, three successiv e regimes are encountered as a function of the electron dose: (1) a reducti on of the downward band bending of energy levels at the sample surface beca use an excess of secondary electrons leaves the sample; (2) the creation of an internal electric field in which secondary electrons drift to the surfa ce, leading to an appreciable increase in the secondary emission and to a l inear relation between the primary electron energy and the secondary electr on yield; and (3) the desorption of hydrogen terminating the carbon surface bonds. The secondary emission thus decreases to very low values. The rate of decrease of secondary emission is similar for C:H- and C:H:Ba-terminated diamond surfaces. (C) 1999 Elsevier Science S.A. All rights reserved.