Characterization of magnetron sputtered carbon nitride films

Citation
W. Kulisch et al., Characterization of magnetron sputtered carbon nitride films, DIAM RELAT, 8(6), 1999, pp. 1039-1045
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
6
Year of publication
1999
Pages
1039 - 1045
Database
ISI
SICI code
0925-9635(199906)8:6<1039:COMSCN>2.0.ZU;2-Z
Abstract
A set of carbon nitride samples has been prepared by reactive magnetron spu ttering. The only parameter varied was the nitrogen partial pressure p(N2). It turns out, however, that p(N2) has noticeable influence on the composit ion and the structure of the films only below 0.1 Pa. The composition of th e bulk of the samples was investigated by elastic recoil detection (ERD), e nergy dispersive X-ray analysis (EDX), wavelength dispersive X-ray analysis (WDX) and Rutherford backscattering (RBS); although all of them give the s ame trend, some systematic differences were observed concerning the absolut e values. Auger electron spectroscopy (AES) and X-ray photoelectron spectro scopy (XPS) measurements revealed that the surface is somewhat depleted in nitrogen. Sputter depth profiling could not be applied due to very strong p referential sputtering of nitrogen. X-ray diffraction (XRD) showed that the films are almost amorphous. Structural information was obtained from Fouri er transform infrared spectroscopy (FTIR), EELS, and XPS; it turned out tha t the films are graphitic or paracyanogen-like with a density of approx. 2 g cm(-3). All of the characterization methods applied are discussed in view of the information they yield on carbon nitride films, and problems of the ir application to this special type of film. (C) 1999 Elsevier Science S.A. All rights reserved.