A new metallization process at sample temperatures up to 600 degrees C duri
ng deposition of the metals is employed for producing low resistivity narro
w Pd ohmic contacts to p-SiC epitaxial layers of 4H, 6H and 15R polytypes.
It is found that the values of the specific contact resistances were equal
for the same Na-Nd concentration in all investigated polytypes. On epitaxia
l layers with Na-Nd=4 x 10(18) cm(-3) a specific contact resistance of 4 x
10(-4) Ohm cm(2) has been measured. Electrical and structural features of t
hese contacts were investigated. (C) 1999 Published by Elsevier Science S.A
. All rights reserved.