Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes

Authors
Kalinina, EV Kholuyanov, GF Shchukarev, AV Savkina, NS Babanin, AI Yagovkina, MA Kuznetsov, NI
Citation
Ev. Kalinina et al., Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes, DIAM RELAT, 8(6), 1999, pp. 1114-1117
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
6
Year of publication
1999
Pages
1114 - 1117
Database
ISI
SICI code
0925-9635(199906)8:6<1114:POCTP4>2.0.ZU;2-9
Abstract
A new metallization process at sample temperatures up to 600 degrees C duri ng deposition of the metals is employed for producing low resistivity narro w Pd ohmic contacts to p-SiC epitaxial layers of 4H, 6H and 15R polytypes. It is found that the values of the specific contact resistances were equal for the same Na-Nd concentration in all investigated polytypes. On epitaxia l layers with Na-Nd=4 x 10(18) cm(-3) a specific contact resistance of 4 x 10(-4) Ohm cm(2) has been measured. Electrical and structural features of t hese contacts were investigated. (C) 1999 Published by Elsevier Science S.A . All rights reserved.