Eg. Kessler et al., Silicon lattice comparisons related to the Avogadro project: Uniformity ofnew material and surface preparation effects, IEEE INSTR, 48(2), 1999, pp. 221-224
Citations number
3
Categorie Soggetti
Instrumentation & Measurement
Journal title
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
New high-quality silicon has been produced by Wacker Siltronics(1) as poten
tial starting material for a precision determination of the Avogadro consta
nt, N-A. An assessment of the uniformity of this material is an essential f
irst step in determining whether this material is of sufficient quality to
be used in this project. We have made extensive measurements to determine l
attice parameter uniformity of several regions of this new material using t
he NIST lattice comparator. Measurements from this comparator have been sho
wn to have a relative internal consistency near 1 x 10(-8). In the course o
f these measurements we noted a significant dependence of lattice parameter
values on surface preparation of the samples. Samples prepared by grinding
followed by chemical-mechanical (c-m) polishing show a wider distribution
than samples prepared by grinding followed by etching. Surface preparation
procedures mere altered to include etching after c-m polishing. This unexpe
cted dependence on surface preparation raises the possibility that some of
the NIST lattice comparison results presented at CPEM96 may be biased by su
rface preparation effects. To test this possibility, some of the samples in
cluded in our CPEM96 contribution have been etched and remeasured. Prelimin
ary estimates of corrections to some NIST CPEM96 lattice comparison results
appear to confirm that bias.