Phase transition between 5 x 5 and 7 x 7 reconstructions of the Si(111) surface induced by pulse ion irradiation during Si molecular beam epitaxy

Authors
Dvurechenskii, AV Zinov'ev, VA Markov, VA Kudryavtsev, VA
Citation
Av. Dvurechenskii et al., Phase transition between 5 x 5 and 7 x 7 reconstructions of the Si(111) surface induced by pulse ion irradiation during Si molecular beam epitaxy, INORG MATER, 35(6), 1999, pp. 536-539
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
35
Issue
6
Year of publication
1999
Pages
536 - 539
Database
ISI
SICI code
0020-1685(199906)35:6<536:PTB5X5>2.0.ZU;2-D
Abstract
Reflection high-energy electron diffraction indicates that pulse irradiatio n with low-energy ions during Si/Si(111) molecular beam epitaxy induces a p hase transition from the 5 x 5 to 7 x 7 surface reconstruction.