Detection and mixing properties of an InSb metal-semiconductor point contact diode

We ppresent preliminary data on the performance of a new fast photodetector based, on a M'-InSb metal-insulator-semiconductor point contact diode oper ating at room temperature and with no bias voltage. The device can work eit her as a video detector or as harmonic miser for radiation from far-infrare d (FIR) to visible. In the FIR region, for wavelengths from 200 to 400 mu m . the W-InSb point contact diode showed a sensitivity comparable to that of Golay; cells. In the visible region tiledevice showed a video and heterody ne detection responsivity much higher with respect to standard M.I.M. point contact diodes. Owing to its ruggedness, low cost and wide band of operati on, the W-InSb point contact diode mal be,e very attractive as a general pu rpose optical sensor.