We ppresent preliminary data on the performance of a new fast photodetector
based, on a M'-InSb metal-insulator-semiconductor point contact diode oper
ating at room temperature and with no bias voltage. The device can work eit
her as a video detector or as harmonic miser for radiation from far-infrare
d (FIR) to visible. In the FIR region, for wavelengths from 200 to 400 mu m
. the W-InSb point contact diode showed a sensitivity comparable to that of
Golay; cells. In the visible region tiledevice showed a video and heterody
ne detection responsivity much higher with respect to standard M.I.M. point
contact diodes. Owing to its ruggedness, low cost and wide band of operati
on, the W-InSb point contact diode mal be,e very attractive as a general pu
rpose optical sensor.