X-ray photoemission and photoabsorption of organic electroluminescent materials

Citation
R. Treusch et al., X-ray photoemission and photoabsorption of organic electroluminescent materials, J APPL PHYS, 86(1), 1999, pp. 88-93
Citations number
51
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
1
Year of publication
1999
Pages
88 - 93
Database
ISI
SICI code
0021-8979(19990701)86:1<88:XPAPOO>2.0.ZU;2-P
Abstract
Thin films of tris-(8, hydroxyquinoline) aluminum (Alq(3)) and N,N'-dipheny l-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) were measured u sing synchrotron radiation-based core and valence level photoemission and c ore level photoabsorption to elucidate the element-specific electronic stru cture of organic electroluminescent materials. The energy level alignment o f an Alq(3)/TPD interface is given for both occupied and unoccupied states. A comparison of freshly evaporated films of Alq(3) and TPD with films that have been exposed to intense radiation or oxidative conditions sheds light on possible damage mechanisms of the molecular solid. (C) 1999 American In stitute of Physics. [S0021-8979(99)03613-0].