Evolution of the mound morphology in (111) oriented polycrystalline Pd films and Co Pd multilayered films with Pd underlayers

Citation
Ib. Chung et al., Evolution of the mound morphology in (111) oriented polycrystalline Pd films and Co Pd multilayered films with Pd underlayers, J APPL PHYS, 86(1), 1999, pp. 306-310
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
1
Year of publication
1999
Pages
306 - 310
Database
ISI
SICI code
0021-8979(19990701)86:1<306:EOTMMI>2.0.ZU;2-J
Abstract
Pd thin films and Co/Pd multilayered films with progressively thicker Pd un derlayers are prepared by physical vapor depositions. Their growth behavior s are investigated using atomic force microscopy and transmission electron microscopy. We observed that a mound occurs on top of each crystallite of ( 111) oriented polycrystalline Pd films and that the average mound size incr eases according to the capillary-induced coalescence mechanism. We attribut e this observed growth instability to the step barrier which resists step-d own diffusion of deposited atoms. We also observed that the mound slopes of Co/Pd multilayers are smaller than those of their Pd underlayers. We sugge st that this results from a downhill current driven by the interface energy between the Co and Pd layers. (C) 1999 American Institute of Physics. [S00 21-8979(99)04712-X].