ZnSe layers of various thicknesses have been grown epitaxially on (001)-ori
ented GaAs substrates by metalorganic vapor phase epitaxy and studied by x-
ray diffraction and Raman scattering. Consistent results have been found fo
r the in-plane strains of both, ZnSe layers below and above the critical va
lue of plastic relaxation. The experimental results are well described by s
train profiles which are evaluated by an energy model and a geometrical mod
el including the effects of strain and work hardening. The thickness-depend
ent full widths at half maximum of the x-ray reflections and the Raman reso
nances are accounted for by assuming uncorrelated misfit dislocations in th
e layers. (C) 1999 American Institute of Physics. [S0021-8979(99)00813-0].