Temperature dependent field effect in organic-based thin-film transistor and its spectroscopic character

The thin field-effect transistor based on amorphous semiconductors, both in organic or organic, is modeled using an iterative scheme. The results of mo deling gave insight into the temperature dependencies of this device. Furth er, we present the differential procedure, based on the first and higher de rivatives of the data, to derive from the field-effect characteristics the basic parameters of the active semiconductor film, i.e., the density of sta tes and field-effect mobility. (C) 1999 American Institute of Physics. [S00 21-8979(99)07513-1].