Capacitance-voltage characteristics of selectively doped AlxGa1-xAs/GaAs heterostructures containing deep traps

Authors
Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation
Ef. Prokhorov et al., Capacitance-voltage characteristics of selectively doped AlxGa1-xAs/GaAs heterostructures containing deep traps, J APPL PHYS, 86(1), 1999, pp. 532-536
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
1
Year of publication
1999
Pages
532 - 536
Database
ISI
SICI code
0021-8979(19990701)86:1<532:CCOSDA>2.0.ZU;2-X
Abstract
The low- and high-frequency capacitance-voltage characteristics of a select ively doped AlxGa1-xAs/GaAs heterostructure containing deep traps in the Al xGa1-xAs layer are calculated. It is shown that the low-frequency capacitan ce-voltage characteristic features a rising portion when the deep traps are localized at the heterointerface, this rising portion being due to the ons et of emptying of the deep traps. The calculated results agree with the exp erimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)0151 3-3].