Arrhenius analysis optical transitions in strained InGaAsP quantum wells

Authors
Lucio, AD Cury, LA Matinaga, FM Sampaio, JF Bernussi, AA de Carvalho, W
Citation
Ad. Lucio et al., Arrhenius analysis optical transitions in strained InGaAsP quantum wells, J APPL PHYS, 86(1), 1999, pp. 537-542
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
1
Year of publication
1999
Pages
537 - 542
Database
ISI
SICI code
0021-8979(19990701)86:1<537:AAOTIS>2.0.ZU;2-B
Abstract
Strained InGaAsP/InP single quantum wells grown by low pressure metalorgani c vapor phase epitaxy are studied by photoluminescence. We demonstrate that the analysis of the Arrhenius plot, specially modified to fit the temperat ure dependence of the integrated photoluminescence intensity, can be used a s a complementary technique in order to identify different optical transiti ons that take place in more complex photoluminescence spectra. (C) 1999 Ame rican Institute of Physics. [S0021-8979(99)08213-4].