Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films

We have studied the effect of misfit strain on the microstructure and prope rties of ferroelectric lead zirconate titanate thin films. We have changed the misfit strain by varying the film thickness and studied the thickness e ffect on the domain formation of epitaxial PbZr0.2Ti0.8O3 (PZT) films grown by pulsed laser deposition on (001) LaAlO3 substrates with La0.5Sr0.5CoO3 (LSCO) electrodes. The nominal thickness of the PZT films was varied from 6 0 to 400 nm with the LSCO electrode thickness kept constant at 50 nm. X-ray diffraction experiments show that the films relax via the formation of a d omains, the fraction of which increase with the ferroelectric film thicknes s. The c-axis lattice constant of PZT films calculated from the 002 reflect ion decreases with increasing film thickness and approaches the bulk value of similar to 0.413 nm in the films thicker than 300 nm. Cross-sectional tr ansmission electron microscopy images reveal that the a-domain fraction and period increase with increasing film thickness. The relaxation of misfit s train in the film is accompanied by systematic changes in the polarization properties, as well as the switching fields, quantified by the coercive fie ld and the activation field. (C) 1999 American Institute of Physics. [S0021 -8979(99)02013-7].