The influence of mass transport processes on the response to gas mixtures of field-effect devices with large-area catalytic metal gates

Citation
M. Johansson et al., The influence of mass transport processes on the response to gas mixtures of field-effect devices with large-area catalytic metal gates, J APPL PHYS, 86(1), 1999, pp. 657-663
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
1
Year of publication
1999
Pages
657 - 663
Database
ISI
SICI code
0021-8979(19990701)86:1<657:TIOMTP>2.0.ZU;2-H
Abstract
A model of how response maps of gas mixtures obtained from large-area field -effect devices with thin catalytic metal gates are affected by the mass tr ansport processes in the gas above the gate has been derived. The model is based on a numerical calculation of the local analyte concentration in the vicinity of the gate of the device. It is found that the catalytic activity of the gate metal may give rise to substantial lateral variations in the a nalyte concentration at the gate. The varying analyte concentration offers an explanation to the shape of the response maps obtained in earlier experi ments. The model is utilized to predict how the analyte mass fraction at th e gate, and thus the response maps, should be affected by the gas velocity, the catalytic surface area, and the local consumption rate of analyte at t he gate. It is also shown that the geometry of the measurement cell that su rrounds the sensing device during measurements may affect the response pict ures. The use of the model in connection with distributed chemical sensing and determination of reaction rates is briefly discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)06413-0].