Inhomogeneous strains in semiconducting nanostructures

We have developed a numerical technique for calculating inhomogeneous strai ns in stressed semiconducting nanostructures, such as quantum wires and dot s manufactured by nanolithography from stressed InGaAs/GaAs quantum wells. The technique is based on solving a linear problem of elasticity theory by the Green's function method and presumes a lack of defects and dislocations in nanostructure heterojunctions. Spatial distributions of strain tensor c omponents and shifts of electron and hole potentials in a nanostructure due to the strain have been calculated. (C) 1999 American Institute of Physics . [S1063-7761(99)02705-5].