Deposition of tetragonal beta-In2S3 thin films from tris(N,N-diisopropylmonothiocarbamato) indium(III), In((SOCNPr2)-Pr-i)(3), by low pressure metal-organic chemical vapour deposition

Tris (N,N-diisopropylmonothiocarbamato)indium(III), In((SOCNPr2)-Pr-i)(3), has been prepared by the reaction of indium(III) chloride and lithium N,N-d iisopropylmonothiocarbamate. In the solid state, the complex is a distorted trigonal prismatic monomer with a meridional configuration, as characteris ed by single-crystal X-ray diffraction. In((SOCNPr2)-Pr-i)(3) has been used as a single-source precursor for the deposition of tetragonal beta-In2S3 t hin films by low pressure metal-organic chemical vapour deposition (LP-MOCV D) at temperatures ranging from 300 to 450 degrees C, on borosilicate glass substrates.