Yq. Fu et al., Deposition of diamond coating on pure titanium using micro-wave plasma assisted chemical vapor deposition, J MATER SCI, 34(10), 1999, pp. 2269-2283
The nucleation and growth of diamond coatings on pure Ti substrate were inv
estigated using microwave plasma assisted chemical vapor deposition (MW-PAC
VD) method. The effects of hydrogen plasma, plasma power, gas pressure and
gas ratio of CH4 and H-2 on the microstructure and mechanical properties of
the deposited diamond coatings were evaluated. Results indicated that the
nucleation and growth of diamond crystals on Ti substrate could be separate
d into different stages: (1) surface etching by hydrogen plasma and the for
mation of hydride; (2) competition between the formation of carbide, diffus
ion of carbon atoms and diamond nucleation; (3) growth of diamond crystals
and coatings on TiC layer. During the deposition of diamond coatings, hydro
gen diffused into Ti substrate forming titanium hydride and led to a profou
nd microstructure change and a severe loss in impact strength. Results also
showed that pre-etching of titanium substrate with hydrogen plasma for a s
hort time significantly increased the nuclei density of diamond crystals. P
lasma power had a significant effect on the surface morphology and the mech
anical properties of the deposited diamond coatings. The effects of gas pre
ssure and gas ratio of CH4 and H-2 on the nucleation, growth and properties
of diamond coatings were also studied. A higher ratio of CH4 during deposi
tion increased the nuclei density of diamond crystals but resulted in a poo
r and cauliflower coating morphology. A lower ratio of CH4 in the gas mixtu
re produced a high quality diamond crystals, however, the nuclei density an
d the growth rate decreased dramatically. (C) 1999 Kluwer Academic Publishe
rs.