XPS investigation of thin SiOx and SiOxNy overlayers

Authors
Birer, O Sayan, S Suzer, S Aydinli, A
Citation
O. Birer et al., XPS investigation of thin SiOx and SiOxNy overlayers, J MOL STRUC, 481, 1999, pp. 611-614
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF MOLECULAR STRUCTURE
ISSN journal
00222860 → ACNP
Volume
481
Year of publication
1999
Pages
611 - 614
Database
ISI
SICI code
0022-2860(19990504)481:<611:XIOTSA>2.0.ZU;2-D
Abstract
Angle-resolved XPS is used to determine the thickness and the uniformity of the chemical composition with respect to oxygen and nitrogen of the very t hin silicon oxide and oxynitride overlayers grown on silicon. (C) 1999 Else vier Science B.V. All rights reserved.