Mechanism of Raman scattering in amorphous silicon

The Raman spectra of various amorphous silicon samples (a-Si, a-Si:H and a- Si1-xCx:H) were carefully examined by consideration of the spectrometer tra nsmission function, the background correction, and the Bose-Einstein temper ature correction factor. Separating the contributions of the polarizabiliti es <(alpha)over left right arrow>(1), <(alpha)over left right arrow>(2) and <(alpha)over left right arrow>(3) defined by Alben et al. [R. Alben, D. We aire, J.E. Smith Jr., M.H. Brodsky, Phys. Rev. 11 (1975) 2271], we have sho wn that in the Raman scattering process only the components <(alpha)over le ft right arrow>(1) and <(alpha)over left right arrow>(3) contribute to Rama n scattering for all types of amorphous silicon we examined. (C) 1999 Elsev ier Science B.V. All rights reserved.