Electron channel drop tunnelling

Citation
L. Dobrzynski et al., Electron channel drop tunnelling, J PHYS-COND, 11(23), 1999, pp. L247-L252
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
23
Year of publication
1999
Pages
L247 - L252
Database
ISI
SICI code
0953-8984(19990614)11:23<L247:ECDT>2.0.ZU;2-O
Abstract
We consider the tunnelling between two monomode quantum wires. We give, in closed form, the conditions for selective transfer of a single propagating electron from one wire to the other, leaving all the neighbouring states un affected. We illustrate the results of the analysis by analytical solutions for a simple composite system made out of GaAs wires. The electron channel drop tunnelling in this system is due to one localized state situated with in a gap of the coupling device. The energy of this state is tuned to be th at of the Fermi energy.