Effects of pH values on the kinetics of liquid-phase chemical-enhanced oxidation of GaAs

The liquid-phase chemical-enhanced oxidation technique has been demonstrate d to be an effective means of growing stable native films on GaAs. The gall ium-ion-containing solution results in a fairly high oxidation rate near ro om temperature. The pH value of the oxidation solution appears to be a domi nant factor in the kinetics of oxidation. Due to the enhancement of Ga-cont aining cations in the solution, a window of initial pH values from approxim ately 4.0 to 4.5 is found to be the optimum pH range for oxide growth. The pH-incorporated mechanism provides consistent interpretations for the unusu al experimental results such as etchback of oxide thickness and increase of refractive index. In addition, the results of the pH-controlled procedure confirms the proposed role of pH. According to secondary ion mass spectrosc opy profiles, it is found that the increasing As/Ga ratio of the oxide film contributes to the increase of oxide refractive index. (C) 1999 The Electr ochemical Society. S0013-4651(98)09-050-8. All rights reserved.