Chemical mechanical polishing of polyarylether low dielectric constant layers by manganese oxide slurry

Polishing of low dielectric constant (low k) organic layers of polyarylethe r (poly-AE) has been studied. Removal rate of poly-AE is 52 nm/min in polis hing by MnO2 slurry at pressure of 163 g/cm(2). This rate is 4.2 times grea ter than that achieved by fumed silica slurry. This rate increase is due to the enhancement of chemical polishing through employing a chemically activ e slurry of MnO2. Removal rate for tantalum nitride (TaN) barrier is 97 Nn/ min in MnO2 slurry. This rate is much greater than the 44 nm/min achieved b y fumed silica slurry. Although many deep scratches are formed at the surfa ce of the poly-AE layer by the polishing of fumed silica slurry, no deep sc ratches are found at the surface polished by MnO2 slurry. (C) 1999 The Elec trochemical Society. S0013-4651(98)09-006-5. All rights reserved.