Formation and growth of CoSi2 on (001)Si inside 0.2-2 mu m oxide openings prepared by electron-beam lithography

Citation
Jy. Yew et al., Formation and growth of CoSi2 on (001)Si inside 0.2-2 mu m oxide openings prepared by electron-beam lithography, J VAC SCI B, 17(3), 1999, pp. 939-944
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
939 - 944
Database
ISI
SICI code
1071-1023(199905/06)17:3<939:FAGOCO>2.0.ZU;2-#
Abstract
The formation and growth of CoSi2 inside 0.2-2 mu m linear oxide openings a nd contact holes prepared by electron-beam lithography have been investigat ed. A thin, uniform epitaxial CoSi2 was grown inside 0.5 mu m or smaller li near openings and 0.7 mu m of smaller contact holes by both one- and two-st ep rapid thermal annealing processes. On the other hand, epitaxial and poly crystalline CoSi2 were found to form on silicon near the edge and central r egion, respectively, inside 0.6 mu m or larger linear openings. The size ef fect of the oxide openings is correlated to the distribution of local stres s induced at the oxide edge. The formation of CoSi at low temperature appea red to be retarded by the local compressive stress near the edge of the lin ear oxide openings. The relative ease in the epitaxial growth of CoSi2 near the oxide edge of the linear openings and of 0.7 mu m and smaller contact holes is attributed to the thinness of the CoSi layer. (C) 1999 American Va cuum Society.