Focused ion-beam structuring of Si and Si/CoSi2 heterostructures using adsorbed hydrogen as a resist

Authors
Fuhrmann, H Dobeli, M Muhle, R Suter, M
Citation
H. Fuhrmann et al., Focused ion-beam structuring of Si and Si/CoSi2 heterostructures using adsorbed hydrogen as a resist, J VAC SCI B, 17(3), 1999, pp. 945-948
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
945 - 948
Database
ISI
SICI code
1071-1023(199905/06)17:3<945:FISOSA>2.0.ZU;2-R
Abstract
A focused ion-beam system was used for structuring of silicon by local deso rption of hydrogen from the HF-passivated surface. The native oxide which w as formed on the depassivated regions was used as an etch mask for KOH. The etch contrast for Ga and Si ions was studied as a function of ion energy a nd fluence. With a fluence on the order of 10(13) cm(2), a feature height o f 15 nm was obtained. The method was applied to produce 160 nm wide CoSi2 w ires on a Si/CoSi2 heterostructure. (C) 1999 American Vacuum Society.