Growth and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon

Our report describes the growth and characterization of self-organized In0. 4Ga0.5As/GaAs quantum dots on Si substrates. The size, shape, and density o f the dots grown on Si are quite different than dots frown on GaAs substrat es under similar conditions. From structural characterization, it is appare nt that the dots, themselves, may be defect free. We present electrolumines cent characteristics of edge-emitting In0.4Ga0.6As quantum dot lasers grown on Si. The laser spectra indicates the emission wavelength is 1.01 mu m at threshold with a linewidth full width at half maximum similar to 4 Angstro m. We observe a blueshift towards smaller wavelengths with increasing curre nt, suggesting the filling of smaller dots. (C) 1999 American Vacuum Societ y. [S0734-211X(99)00503-X].