Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy

Authors
Baklenov, O Nie, H Campbell, JC Streetman, BG Holmes, AL
Citation
O. Baklenov et al., Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy, J VAC SCI B, 17(3), 1999, pp. 1124-1126
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
1124 - 1126
Database
ISI
SICI code
1071-1023(199905/06)17:3<1124:LLFIQD>2.0.ZU;2-Q
Abstract
We report on a systematic study of In0.5Ga0.5As quantum dots Grown by the m igration enhanced epitaxy technique. A maximum room-temperature luminescenc e wavelength of 1.37 mu m has been achieved. We observe the presence of two emission maxima, which we attribute to the formation and interaction of tw o different dot-size distributions. Photoluminescence data analysis shows t he formation of large quantum dots with good size uniformity that emit at 1 .3 mu m and longer due to the enhanced atomic migration lengths. (C) 1999 A merican Vacuum Society. [S0734-211X(99)01103-8].