Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy

Authors
Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation
X. Yang et al., Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1144-1146
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
1144 - 1146
Database
ISI
SICI code
1071-1023(199905/06)17:3<1144:POAATA>2.0.ZU;2-5
Abstract
InGaAsN/GaAs quantum wells on GaAs substrates were grown by solid source mo lecular beam epitaxy using a N-2 radio frequency plasma source. Photolumine scence (PL) reveals a redshift in the PL peak of InGaAsN/GaAs quantum well with increasing N concentration. Rapid thermal annealing (RTA) of InGaAsN/G aAs quantum wells is shown to increase N incorporation and photoluminescenc e efficiency. A PL peak of 1.35 mu m has been obtained at room temperature from an InGaAsN/GaAs quantum well after RTA at 550 degrees C. Room temperat ure pulsed operation of InGaAsN/GaAs single quantum well laser was demonstr ated. (C) 1999 American Vacuum Society. [S0734-211X(99)02603-7].