Study of factors limiting electron mobility in InSb quantum wells

Authors
Chung, SJ Goldammer, KJ Lindstrom, SC Johnson, MB Santos, MB
Citation
Sj. Chung et al., Study of factors limiting electron mobility in InSb quantum wells, J VAC SCI B, 17(3), 1999, pp. 1151-1154
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
1151 - 1154
Database
ISI
SICI code
1071-1023(199905/06)17:3<1151:SOFLEM>2.0.ZU;2-H
Abstract
We observe a significant increase in InSb quantum-well mobility when remote doping of Al0.09In0.91Sb barriers is accomplished by three layers, rather than one layer, of Si delta doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280 000 cm( 2)/V s with an electron density of 2.33 x 10(11) cm(-2). The density of ori ented abrupt steps and square-mound features on the sample surface correlat es with the electron mobility in the well. (C) 1999 American Vacuum Society . [S0734-211X(99)04203-1].