GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy

We investigated optical properties of GaAs/GaAs1-xPx(x similar or equal to 0.2) quantum wells (QWs) with each well width (L-w) of 2.7-10.0 nm grown on (100) and (n11)A GaAs substrates (n=3, 4, 5) by molecular beam epitaxy wit h the use of P-2 and As-4 molecular beams generated from polycrystalline Ga p chunk and solid As sources. It was found that the P contents (x) in GaAs1 -xPx layers strongly depend on both the substrate orientation and substrate temperature (T-s). In the whole range of the T-s (535-640 degrees C), the largest P contents (x=0.19-0.23) were observed in the (411)A GaAs1-xPx laye rs, and the (100) GaAs1-xPx layers showed the smallest x (0.08-0.18). The f ull width at half maximum of photoluminescence (PL) peak (lambda = 758 nm) from the (411)A GaAs/GaAsP QW with L-w = 2.7 nm was as small as 5 meV which is only 66% of that of the (100) QW probably due to improved interface fla tness of the (411)A QW. Furthermore, the PL intensities of the (411)A and ( 311)A QWs were more than one order of magnitude larger in intensity than th at of the (100) QWs. (C) 1999 American Vacuum Society. [S0734-211X(99)03403 -4].