Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications

In this article, we present the comparison of material quality and device p erformance of gas-source molecular beam epitaxy (GSMBE)- and metal-organic molecular beam epitaxy (MOMBE)-grown C-doped InGaAs and npn InGaAs/InP hete rojunction bipolar transistors (HBTs). The results indicate that the crysta l quality of GSMBE-grown samples is comparable to that of MOMBE-grown sampl es. The GSMBE-grown HBTs show excellent de and high frequency performance. The de current gain (beta) was 37 at a collector current of 21 mA and the e mitter-base and base-collector junction ideality factors were 1.14 and 1.04 indicating good junction properties. For high frequency performance, the f (T) and f(max) are around 108 and 128 GHz for a 4000 Angstrom InGaAs collec tor with an emitter area of 3 x 10 mu m(2). Finally, the thermal stability of C-doped InGaAs and its effects on InP/IncaAs HBT device reliability will be discussed. (C) 1999 American Vacuum Society. [S0734-211X(99)05703-0].