Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy

Authors
Cai, WZ Lubyshev, DI Miller, DL Streater, RW SpringThorpe, AJ
Citation
Wz. Cai et al., Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1190-1194
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
1190 - 1194
Database
ISI
SICI code
1071-1023(199905/06)17:3<1190:HCIOI(>2.0.ZU;2-W
Abstract
Heavily carbon-doped In0.53Ga0.47As with hole densities between 5.6 X 10(18 ) and 2.1 X 10(20) cm(-3) has been grown by solid source molecular beam epi taxy on InP. The dependence of carbon tetrabromide (CBr4)-induced lattice m ismatch upon the atomic carbon concentration has been determined from x-ray rocking curve measurements. It has been found by secondary ion mass spectr oscopy that the alloy composition is altered by the preferential etching ef fect of CBr4. After taking into account this compositional change, the "int rinsic" lattice contraction solely due to carbon incorporation has been obt ained, which obeys Vegard's law. (C) 1999 American Vacuum Society. [S0734-2 11X(99)02503-2].