Pa. Postigo et al., Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source, J VAC SCI B, 17(3), 1999, pp. 1281-1284
Low threshold aluminum-free, InGaP/GaAs/InGaAs quantum well laser diodes ha
ve been grown at low temperature on GaAs using a GaP sublimation source for
phosphorous and an atomic hydrogen cracker source for substrate surface pr
eparation. The growth cycle was conducted entirely below 470 degrees C so t
hat it is compatible with growth on GaAs very large scale integrated circui
ts, as in the epitaxy-on-electronics monolithic optoelectronic integration
precesses. The room temperature pulsed threshold current density of broad-a
rea stripe contact laser diodes was consistently on the order of 0.38 kA/cm
(2). InGaP grown with the GaP cell is found by secondary ion mass spectrosc
opy to contain significant amounts of oxygen, particularly in Be- and Si-do
ped layers. (C) 1999 American Vacuum Society. [S0734-211X(99)00903-8].