Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source

Citation
Pa. Postigo et al., Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source, J VAC SCI B, 17(3), 1999, pp. 1281-1284
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
1281 - 1284
Database
ISI
SICI code
1071-1023(199905/06)17:3<1281:LTSMEG>2.0.ZU;2-1
Abstract
Low threshold aluminum-free, InGaP/GaAs/InGaAs quantum well laser diodes ha ve been grown at low temperature on GaAs using a GaP sublimation source for phosphorous and an atomic hydrogen cracker source for substrate surface pr eparation. The growth cycle was conducted entirely below 470 degrees C so t hat it is compatible with growth on GaAs very large scale integrated circui ts, as in the epitaxy-on-electronics monolithic optoelectronic integration precesses. The room temperature pulsed threshold current density of broad-a rea stripe contact laser diodes was consistently on the order of 0.38 kA/cm (2). InGaP grown with the GaP cell is found by secondary ion mass spectrosc opy to contain significant amounts of oxygen, particularly in Be- and Si-do ped layers. (C) 1999 American Vacuum Society. [S0734-211X(99)00903-8].