Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source

Low threshold aluminum-free, InGaP/GaAs/InGaAs quantum well laser diodes ha ve been grown at low temperature on GaAs using a GaP sublimation source for phosphorous and an atomic hydrogen cracker source for substrate surface pr eparation. The growth cycle was conducted entirely below 470 degrees C so t hat it is compatible with growth on GaAs very large scale integrated circui ts, as in the epitaxy-on-electronics monolithic optoelectronic integration precesses. The room temperature pulsed threshold current density of broad-a rea stripe contact laser diodes was consistently on the order of 0.38 kA/cm (2). InGaP grown with the GaP cell is found by secondary ion mass spectrosc opy to contain significant amounts of oxygen, particularly in Be- and Si-do ped layers. (C) 1999 American Vacuum Society. [S0734-211X(99)00903-8].