Cl-2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn

Thin films of CoFeB, CoSm, CoZr and FeMn have been etched in inductively co upled plasma Cl-2 discharges with He, Ar or Xe as the inert gas additive as an additional physical component to the etch process. The etch rates decre ase with pressure and go through maxima with rf chuck power and discharge c omposition. There is a transition from net deposition to etching with incre asing source power and rf chuck power, consistent with the need to provide sufficient ion energy and ion/neutral flux ratio to achieve efficient etchi ng of magnetic materials. (C) 1999 Elsevier Science S.A. All rights reserve d.