Effects of MgO annealing process in a vacuum on the discharge characteristics of AC PDP

Citation
Ch. Park et al., Effects of MgO annealing process in a vacuum on the discharge characteristics of AC PDP, MAT SCI E B, 60(2), 1999, pp. 149-155
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
60
Issue
2
Year of publication
1999
Pages
149 - 155
Database
ISI
SICI code
0921-5107(19990615)60:2<149:EOMAPI>2.0.ZU;2-N
Abstract
This paper deals with the relationships between various annealing condition s in a vacuum and the surface glow discharge characteristics on the MgO thi n film prepared by e-beam evaporation method. The minimum discharge incepti on voltage is obtained for the sample annealed at 400 degrees C for about 2 h in a clean vacuum. Above the annealing temperature of 430 degrees C, cra cks are founded on the MgO film, which results in higher discharge voltage. Moreover, the lower the annealing pressure, the lower the discharge voltag e. The main factors that improves the discharge characteristics by annealin g process is considered to be due to both the morphology changes or crystal structure of the MgO thin films and pumping impurities in the MgO him duri ng the annealing process. (C) 1999 Elsevier Science S.A. All rights reserve d.