This paper deals with the relationships between various annealing condition
s in a vacuum and the surface glow discharge characteristics on the MgO thi
n film prepared by e-beam evaporation method. The minimum discharge incepti
on voltage is obtained for the sample annealed at 400 degrees C for about 2
h in a clean vacuum. Above the annealing temperature of 430 degrees C, cra
cks are founded on the MgO film, which results in higher discharge voltage.
Moreover, the lower the annealing pressure, the lower the discharge voltag
e. The main factors that improves the discharge characteristics by annealin
g process is considered to be due to both the morphology changes or crystal
structure of the MgO thin films and pumping impurities in the MgO him duri
ng the annealing process. (C) 1999 Elsevier Science S.A. All rights reserve
d.