Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator

The performance of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high elect ron mobility transistor (p-HEMT) was simulated using a two-dimensional devi ce simulator, MEDICI [(Two-Dimensional device Simulation Program, Technolog y Modeling Associates Inc., Sunnyvale, CA, 1997)1]. Physical models used in the simulation include Shockley-Read Hall recombination, Auger recombinati on, Fermi-Dirac statistics and field-dependent mobility. Key results presen ted include the transconductance, current gain cut-off frequency and curren t-voltage (I-V) characteristics. We compared the simulated performance to t wo fabricated devices of different gate lengths and obtained a good match b etween our simulation results and measured data. These results show that th e chosen physical models applied by the two-dimensional device simulation p rogram is viable for a fast turn-around study and development of p-HEMT dev ices prior to fabrication. (C) 1999 Elsevier Science Ltd. All rights reserv ed.