Random telegraph signal noise instabilities in lattice-mismatched InGaAs InP photodiodes

Citation
D. Pogany et G. Guillot, Random telegraph signal noise instabilities in lattice-mismatched InGaAs InP photodiodes, MICROEL REL, 39(3), 1999, pp. 341-345
Citations number
24
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
3
Year of publication
1999
Pages
341 - 345
Database
ISI
SICI code
0026-2714(199903)39:3<341:RTSNII>2.0.ZU;2-2
Abstract
Spontaneous and induced instabilities in the character of Random Telegraph Signal (RTS) noise are studied in photodetector arrays, fabricated on latti ce-mismatched InGaAs/InP heterostructures. The disappearance and reappearan ce of the RTS noise as well as abrupt changes in the RTS noise amplitude an d pulse complexity are investigated as a function of voltage:and temperatur e. The RTS noise instabilities are explained in terms of structural transfo rmation of complex multistable crystalline defects. (C) 1999 Elsevier Scien ce Ltd. All rights reserved.