Photoluminescence studies in CuInxGa1-xSe2 films prepared by graphite box annealing of In/Ga/Cu/Se stacked elemental layers

Authors
Kundu, SN Chaudhuri, S Pal, AK
Citation
Sn. Kundu et al., Photoluminescence studies in CuInxGa1-xSe2 films prepared by graphite box annealing of In/Ga/Cu/Se stacked elemental layers, MOD PHY L B, 13(5), 1999, pp. 153-158
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MODERN PHYSICS LETTERS B
ISSN journal
02179849 → ACNP
Volume
13
Issue
5
Year of publication
1999
Pages
153 - 158
Database
ISI
SICI code
0217-9849(19990228)13:5<153:PSICFP>2.0.ZU;2-9
Abstract
CuInxGa1-xSe2 films were synthesized by graphite box annealing of In/Ga/Cu/ Se stacked elemental layers deposited by thermal evaporation onto sodalime glass substrates. Photoluminescence (PL) studies were carried out in near s toichiometric and copper-rich films with Ga/(In+Ga) ratios varying between 0.24-0.29. The PL spectra were dominated by peaks at similar to 1.19 eV and 0.87 eV with a shoulder at similar to 0.84 eV. There was also a peak aroun d 1.3 eV which could be assigned to the absorption from the split-off band. The transitions at similar to 1.19 eV and 0.87 eV were due to excitonic tr ansition and donor-acceptor pair formation respectively.