Nucleation and growth of diamond film on porous silicon substrate

Authors
Liao, Y Fang, RC Ye, F Shao, QY Wang, GZ
Citation
Y. Liao et al., Nucleation and growth of diamond film on porous silicon substrate, MOD PHY L B, 13(5), 1999, pp. 159-165
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MODERN PHYSICS LETTERS B
ISSN journal
02179849 → ACNP
Volume
13
Issue
5
Year of publication
1999
Pages
159 - 165
Database
ISI
SICI code
0217-9849(19990228)13:5<159:NAGODF>2.0.ZU;2-K
Abstract
Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X -ray photoelectron spectroscopy, A nucleation density of 3.6 x 10(7) cm(-2) is obtained. We find that almost air nuclei occur at the edge of the etche d pores. The diamond film directly deposits on porous silicon substrate wit hout the intermediate and no strains are found in the film.