Effect of gallium oxide dopants an electrophysical and sorption propertiesof zinc oxide

Citation
Mv. Vinokurova et al., Effect of gallium oxide dopants an electrophysical and sorption propertiesof zinc oxide, RUSS CHEM B, 48(2), 1999, pp. 266-270
Citations number
8
Categorie Soggetti
Chemistry
Journal title
RUSSIAN CHEMICAL BULLETIN
ISSN journal
10665285 → ACNP
Volume
48
Issue
2
Year of publication
1999
Pages
266 - 270
Database
ISI
SICI code
1066-5285(199902)48:2<266:EOGODA>2.0.ZU;2-T
Abstract
The effect of gallium oxide dopants (0.1-0.3 at.% Ga) on the electrophysica l and sorption properties of ZnO was studied in the temperature range from 19 to 350 degrees C. The introduction of the dopant increasing the conducti vity of ZnO is accompanied by a change in the amounts of SO2 and Cl-2 sorbe d and the reactivity of zinc oxide.