The effect of gallium oxide dopants (0.1-0.3 at.% Ga) on the electrophysica
l and sorption properties of ZnO was studied in the temperature range from
19 to 350 degrees C. The introduction of the dopant increasing the conducti
vity of ZnO is accompanied by a change in the amounts of SO2 and Cl-2 sorbe
d and the reactivity of zinc oxide.