DOUBLE-INJECTION BIFURCATION OPTICAL ACTIVE SWITCH INTEGRATED ON SILICON-ON-INSULATOR FOR 1.3 MU-M OPERATION

Authors
ZHAO CZ CHEN AH LIU EK LI GZ
Citation
Cz. Zhao et al., DOUBLE-INJECTION BIFURCATION OPTICAL ACTIVE SWITCH INTEGRATED ON SILICON-ON-INSULATOR FOR 1.3 MU-M OPERATION, Chinese Physics Letters, 14(3), 1997, pp. 183-186
Citations number
12
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
14
Issue
3
Year of publication
1997
Pages
183 - 186
Database
ISI
SICI code
0256-307X(1997)14:3<183:DBOASI>2.0.ZU;2-S
Abstract
Based on the double-injection effect, the dual-mode interference princ iple and the free-carrier plasma dispersion effect, a double-injection bifurcation optical active switch integrated on silicon-on-insulator has been proposed and fabricated. Its insertion loss and crosstalk are measured to be less than 5.32 and -14.4 dB, respectively, at waveleng th 1.3 mu m and the total switching current 90 mA. Response time is ab out 180 ns.