Cz. Zhao et al., DOUBLE-INJECTION BIFURCATION OPTICAL ACTIVE SWITCH INTEGRATED ON SILICON-ON-INSULATOR FOR 1.3 MU-M OPERATION, Chinese Physics Letters, 14(3), 1997, pp. 183-186
Based on the double-injection effect, the dual-mode interference princ
iple and the free-carrier plasma dispersion effect, a double-injection
bifurcation optical active switch integrated on silicon-on-insulator
has been proposed and fabricated. Its insertion loss and crosstalk are
measured to be less than 5.32 and -14.4 dB, respectively, at waveleng
th 1.3 mu m and the total switching current 90 mA. Response time is ab
out 180 ns.