Photoluminescence of erbium-doped silicon: excitation power dependence

Citation
Caj. Ammerlaan et al., Photoluminescence of erbium-doped silicon: excitation power dependence, SEMICONDUCT, 33(6), 1999, pp. 598-602
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
6
Year of publication
1999
Pages
598 - 602
Database
ISI
SICI code
1063-7826(199906)33:6<598:POESEP>2.0.ZU;2-S
Abstract
The intensity of the photoluminescence of erbium in silicon is analyzed by a model which takes into account the formation of free excitons, the bindin g of excitons to erbium ions, the excitation of inner-shell 4f electrons of erbium ions and their subsequent decay by light emission. Predictions of t his model for the dependence of luminescence intensity on laser excitation power are compared with experimental observations. The results for float-zo ne and Czochralski-grown silicon, in which erbium is introduced by implanta tion with or without oxygen co-implantation, are remarkably similar. To obt ain agreement between model analysis and experimental data it is necessary to include in the model terms describing energy dissipation by an Auger pro cess of both the erbium-bound excitons and the erbium ions in excited state with free electrons in the conduction band. A good quantitative agreement is achieved. (C) 1999 American Institute of Physics. [S1063-7826(99)00306-3 ].