Optical activity of Yb in GaAs and low-dimensional GaAs GaAlAs structures

Authors
Gippius, AA Konnov, VM Dravin, VA Loiko, NN Kazakov, IP Ushakov, VV
Citation
Aa. Gippius et al., Optical activity of Yb in GaAs and low-dimensional GaAs GaAlAs structures, SEMICONDUCT, 33(6), 1999, pp. 627-629
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
6
Year of publication
1999
Pages
627 - 629
Database
ISI
SICI code
1063-7826(199906)33:6<627:OAOYIG>2.0.ZU;2-D
Abstract
It is shown that the optical activation of Yb in GaAs and low-dimensional G aAs/GaAlAs structures can be achieved by forming three-component (Yb+S/Se/T e+O) luminescence centers based on the Yb3+ ion. A correlation between the characteristics of these centers and the parameters of the chalcogen coacti vators is discovered. Oxygen is shown to play a decisive role in transferri ng the energy of electron-hole pairs to the luminescence centers. (C) 1999 American Institute of Physics. [S1063-7826(99)01106-0].