Electric and luminescence properties of GaAs-A(II)B(IV)C(2)(V) single crystals

Authors
Polushina, IK Rud', YV Rud', VY
Citation
Ik. Polushina et al., Electric and luminescence properties of GaAs-A(II)B(IV)C(2)(V) single crystals, SEMICONDUCT, 33(6), 1999, pp. 645-647
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
6
Year of publication
1999
Pages
645 - 647
Database
ISI
SICI code
1063-7826(199906)33:6<645:EALPOG>2.0.ZU;2-6
Abstract
GaAs-A(II)B(IV)C(2)(V) single crystals are grown by crystallization from di lute gallium fluxed solutions. The electric and luminescence properties of the crystals obtained are investigated. It is shown that the technological process is accompanied by the standard doping of gallium arsenide and makes it possible to grow gallium arsenide single crystals whose optoelectronic properties are controlled by the A(II)B(IV)As(2) compound introduced into t he fluxed solution. (C) 1999 American Institute of Physics. [S1063-7826(99) 01506-9].